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ZXMP6A13F
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
-60
?
?
?
?
?
?
-0.5
±100
V
μ A
nA
I D = -250 μ A, V GS = 0V
V DS = -60V, V GS = 0V
V GS = ± 20V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 10)
Forward Transconductance (Notes 10 and 12)
Diode Forward Voltage (Note 10)
Reverse Recovery Time (Note 12)
Reverse Recovery Charge (Note 12)
V GS(th)
R DS (ON)
g fs
V SD
t rr
Q rr
-1.0
?
?
?
?
?
?
?
1.8
-0.85
21.1
19.3
-3.0
0.400
0.600
?
-0.95
?
?
V
?
S
V
ns
nC
I D = -250 μ A, V DS = V GS
V GS = -10V, I D = -0.9A
V GS = -4.5V, I D = -0.8A
V DS = -15V, I D = -0.9A
T J = 25°C, I S = -0.8A, V GS = 0V
T J = 25°C, I F = -0.9A,
di/dt = 100A/ μ s
DYNAMIC CHARACTERISTICS (Note 12)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time (Note 11)
Turn-On Rise Time (Note 11)
Turn-Off Delay Time (Note 11)
Turn-Off Fall Time (Note 11)
Total Gate Charge (Note 11)
Total Gate Charge (Note 11)
Gate-Source Charge (Note 11)
Gate-Drain Charge (Note 11)
C iss
C oss
C rss
t D(on)
t r
t D(off)
t f
Q g
Q g
Q gs
Q gd
?
?
?
?
?
?
?
?
?
?
?
219
25.7
20.5
1.6
2.2
11.2
5.7
2.9
5.9
0.74
1.5
?
?
?
?
?
?
?
?
?
?
?
pF
ns
nC
nC
V DS = -30V, V GS = 0V
f = 1.0MHz
V DD = -30V, I D = -1A,
R G ? 6.0 Ω, V GS = -10V
V DS = -30V, V GS = -4.5V,
I D = -0.9A
V DS = -30V, V GS = -10V,
I D = -0.9A
Notes:
10. Measured under pulsed conditions. Pulse width = 300 μ s. Duty cycle ≤ 2%.
11. Switching characteristics are independent of operating junction temperature.
12. For design aid only, not subject to production testing.
ZXMP6A13F
Document Number DS32014 Rev. 6 - 2
4 of 8
www.diodes.com
September 2012
? Diodes Incorporated
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